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RD50 Papers

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2023-07-27
06:14
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon / RD50 Collaboration
This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$\Omega\cdot$cm were irradiated with fluence values between \SI{1e15}{\per□\centi\meter} and \SI{6e15}{\per□\centi\meter} [...]
arXiv:2306.14736.- 2023-07-26 - 16 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168559 Fulltext: PDF;

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2022-09-16
06:21
Increase of the photoconductivity quantum yield in silicon irradiated by neutrons to extremely high fluences / Vaitkus, Juozas V (Vilnius U. (main)) ; Moll, Michael (CERN) ; Kažukauskas, Vaidotas (Vilnius U. (main)) ; Vertelis, Vilius (Vilnius U. (main))
An enhanced quantum yield observed in silicon ionizing radiation detectors, neutron-irradiated to extremely high fluences, could be attributed to impact ionization via deep levels. The quantum yield was investigated by the intrinsic photoconductivity optical spectroscopy in silicon irradiated by neutrons to a wide range of fluences up to $1 \times 10^{17}$ neutron cm$^{-2}$. An increase of quantum yield was observed in highly irradiated samples. [...]
2022 - 9 p. - Published in : J. Phys. D 55 (2022) 395104 Fulltext: PDF;

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2022-06-02
06:29
Development of high voltage-CMOS sensors within the CERN-RD50 collaboration / Vilella, E (Liverpool U.) /CERN-RD50 Collaboration
This paper presents work done by the CERN-RD50 collaboration to develop and study monolithic CMOS sensors for future hadron colliders, especially in terms of radiation tolerance, time resolution and granularity. Currently CERN-RD50 is completing the performance evaluation of RD50-MPW2 and has recently submitted RD50-MPW3, the second and third prototype sensor chips designed by the collaboration. [...]
2022 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166826 Publication: PDF;
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.1668263

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2022-04-07
06:02
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes / Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50- $\Omega $ cm material after irradiation with 23-GeV protons to a fluence of $6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$ [...]
2022 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586 External link: preprint

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2018-09-11
04:29
Proprieties of FBK UFSDs after neutron and proton irradiation up to $6*10^{15}$ neq/cm$^2$ / Mazza, S.M. (UC, Santa Cruz, Inst. Part. Phys.) ; Estrada, E. (UC, Santa Cruz, Inst. Part. Phys.) ; Galloway, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Gee, C. (UC, Santa Cruz, Inst. Part. Phys.) ; Goto, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Luce, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; McKinney-Martinez, F. (UC, Santa Cruz, Inst. Part. Phys.) ; Rodriguez, R. (UC, Santa Cruz, Inst. Part. Phys.) ; Sadrozinski, H.F.W. (UC, Santa Cruz, Inst. Part. Phys.) ; Seiden, A. (UC, Santa Cruz, Inst. Part. Phys.) et al.
The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. [...]
arXiv:1804.05449.- 2020-04-30 - 13 p. - Published in : JINST 15 (2020) T04008 Fulltext: PDF;

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2018-08-25
06:58
Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias / Mandić, I (Ljubljana U. ; Stefan Inst., Ljubljana) ; Cindro, V (Ljubljana U. ; Stefan Inst., Ljubljana) ; Kramberger, G (Ljubljana U. ; Stefan Inst., Ljubljana) ; Mikuž, M (Ljubljana U. ; Stefan Inst., Ljubljana) ; Zavrtanik, M (Ljubljana U. ; Stefan Inst., Ljubljana)
The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. [...]
2004 - 12 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 533 (2004) 442-453

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2018-08-23
11:31
Reactions of interstitial carbon with impurities in silicon particle detectors / Makarenko, L F (Belarus State U.) ; Moll, M (CERN) ; Korshunov, F P (IFTTP, Minsk) ; Lastovski, S B (IFTTP, Minsk)
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. [...]
2007 - 6 p. - Published in : J. Appl. Phys. 101 (2007) 113537

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2018-08-23
11:31
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p. - Published in : J. Appl. Phys. 123 (2018) 161576

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2018-08-23
11:31
A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique / Bates, A G (Glasgow U. ; CERN) ; Moll, M (CERN)
Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A thorough study of 24 GeV/$c$ proton-irradiated p$^+$-in-n Float Zone (FZ) , Diffusion Oxygenated Float Zone (DOFZ) and MCz silicon detectors has been conducted using the standard radiation damage characterization tools $IV$ and $CV$ , the Transient Current Technique (TCT) and annealing studies. [...]
2005 - 12 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 555 (2005) 113-124

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2018-08-23
11:31
Characterization of magnetic Czochralski silicon radiation detectors / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363

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